What SiC can change? Carbide can achieve energy saving, promote industrial upgrading. SiC semiconductor products in the civilian field of power electronics as "Green Devices" for achieving energy saving will play a major role for the establishment of a low-carbon clean energy systems, high-end equipment manufacturing industry to upgrade to lay a solid foundation. Such as silicon carbide power devices used in the new energy vehicles, rail locomotive, appliances, smart grid, solar energy, wind power, voltage conversion and other fields, energy consumption can be reduced by 50%. Shandong days Yue Crystal Materials Co., Ltd., the system volume is reduced 75 %; electricity used in our entire electricity consumption accounts for about 60% of sapphire multifunction applications, lighting electricity consumption accounts for about 20% of our total electricity consumption can reduce energy consumption by 50% in these two areas to promote the use of post silicon carbide semiconductor technology is only in power electronics, lighting electronics field after application can save the country 2.1 trillion degrees electricity per year, equivalent to 20 years of power generation capacity of the Three Gorges power station. Zhang Zhihai said, "the future of the semiconductor silicon carbide power devices will be made into the support from the development trend in today's energy-saving technologies and become part of the core energy-saving equipment, semiconductor silicon carbide power devices and therefore also the industry as a power converter device ' CPU ', green economy' core '' market in general, there are three materials can be used as a substrate: sapphire (Al2O3), silicon (Si), silicon carbide (Sic). Which is the most used sapphire substrate material, with the production technology is mature, better device quality, good stability, high mechanical strength, easy handling and cleaning and so on. But it also has many disadvantages can be overcome: first, the lattice mismatch and thermal mismatch stress will result in a large number of defects in the epitaxial layer, also causing difficulties for subsequent processing devices; the second, sapphire is an insulator, the resistivity is large vertical structure of the device can not be made; the third, usually only on the surface of the epitaxial layer produced N-type and P-type silicon carbide products multifunction electrode application, resulting in a reduction in the effective emitting area Shandong days Yue, lower material utilization; s Fourth, the hardness of sapphire is very high, second only to diamond, it is difficult to carry out thinning and cutting; fifth, sapphire thermal performance is not very good, so the use of semiconductor lighting devices, a lot of heat will be transmitted on the area than large high-power devices, thermal performance is a very important consideration. In order to solve the above problems, improve thermal and electrical conductivity properties of LED devices, more and more companies began to use silicon carbide or silicon substrate in photovoltaic devices, domestic companies on such substrate material development and processing have made no small progress. Shandong days Yue Advanced Materials Technology Co., Ltd. Shandong days Yue _ _ silicon carbide crystals provided by Jinan Spark Technology Development Company Limited. Jinan Spark Technology Development Co., Ltd. (www.sicc.cc) strong, credible, in Jinan, Shandong chemical equipment industry has accumulated a large number of loyal customers. The company better work attitude and constantly improving innovative ideas will lead Shandong days into the glorious mountain and you work for a better future!